다결정 실리콘의 제조방법과 그 장치
| 대표분류 | 분리/혼합 | ||
|---|---|---|---|
| 연구기관 | 한국화학연구원 | 연구자 | 김희영 |
| 기술내용 |
이전대상 특허번호: 2001-10040960(중국) 이전유형: 양도 기술료: 550만원(부가세포함) 비고: - The present invention relates to a method and an apparatus for preparing polysilicon, more specifically to a method and an apparatus for preparing polysilicon in granule form by equipping a fluidized bed reactor with a nozzle that provides an etching gas including hydrogen chloride in order to effectively prevent silicon from depositing on the outlet surfaces of the reaction gas supplying means and to be able to operate the reactor continuously in the bulk production of polysilicon granules. |
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| 자료집 | 다운로드 | ||